Effect of ethanol concentrations on few layer Schottky graphene transistors

Conduction coefficient modeling in bilayer graphene based on schottky transistors

Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...

Few-layer HfS2 transistors

HfS2 is the novel transition metal dichalcogenide, which has not been experimentally investigated as the material for electron devices. As per the theoretical calculations, HfS2 has the potential for well-balanced mobility (1,800 cm(2)/V·s) and bandgap (1.2 eV) and hence it can be a good candidate for realizing low-power devices. In this paper, the fundamental properties of few-layer HfS2 flake...

Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide

In this work, we study electron transport across the heterojunction interface of epitaxial few-layer graphene grown on silicon carbide and the underlying substrate. The observed Schottky barrier is characterized using current-voltage, capacitance-voltage and photocurrent spectroscopy techniques. It is found that the graphene/SiC heterojunction cannot be characterized by a single unique barrier ...

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm(2)/V · s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where th...

Bias-temperature instability in single-layer graphene field-effect transistors